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Semiconductor devices - Micro-electromechanical devices - Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures (IEC 62047-12:2011); German version EN 62047-12:2011

Standard [CURRENT]

DIN EN 62047-12:2012-06

Semiconductor devices - Micro-electromechanical devices - Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures (IEC 62047-12:2011); German version EN 62047-12:2011

German title
Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 12: Verfahren zur Prüfung der Biege-Ermüdungsfestigkeit von Dünnschichtwerkstoffen unter Verwendung der Resonanzschwingungen bei MEMS-Strukturen (IEC 62047-12:2011); Deutsche Fassung EN 62047-12:2011
Publication date
2012-06
Original language
German
Pages
31

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Publication date
2012-06
Original language
German
Pages
31
DOI
https://dx.doi.org/10.31030/1881344
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Overview

The main structural materials for MEMS, micromachine, etcetera, have special features, such as typical dimensions of a few microns, material fabrication by deposition, and test piece fabrication by means of non-mechanical machining, including photolithography. The MEMS structures often have higher fundamental resonant frequency and higher strength than macro structures. To evaluate and assure the lifetime of MEMS structures, a fatigue testing method with ultra-high cycles (up to 1012) loadings needs to be established. The object of the test method is to evaluate the mechanical fatigue properties of microscale materials in a short time by applying high load and high cyclic frequency bending stress using resonant vibration. This part of the DIN EN 62047 standard series specifies a method for bending fatigue testing using resonant vibration of microscale mechanical structures of MEMS (micro-electromechanical systems) and micromachines. This standard applies to vibrating structures ranging in size from 10 µm to 1 000 µm in the plane direction and from 1 µm to 100 µm in thickness, and test materials measuring under 1 mm in length, under 1 mm in width, and between 0,1 µm and 10 µm in thickness. The responsible committee is DKE/K 631 "Halbleiterbauelemente" ("Semiconductor devices") of the DKE (German Commission for Electrical, Electronic and Information Technologies) at DIN and VDE.

Content

ICS

31.080.01, 31.220.01

DOI

https://dx.doi.org/10.31030/1881344

Cooperation at DIN

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