DIN EN 62417:2010-12

This document specifies a test to determine the amount of positive mobile ions in oxide layers in metal-oxide semiconductor field effect transistors at the wafer level. The test is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of the microelectronic devices, for example, by shifting the threshold voltage of MOSFET or by inversion of the base in bipolar transistors. The stress is applied on the test structures at an elevated temperature so the mobile ions can overcome the energy barrier at the interfaces and the ion mobility in the oxide is sufficiently high. Two test methods are specified in this document: - bias temperature stress (BTS), the test is carried out with transistors; - voltage sweep (VS), the test is carried out with capacitor structures. The responsible Committee is K 631 "Halbleiterbauelemente" ("Semiconductor devices") of the DKE (German Commission for Electrical, Electronic and Information Technologies) at DIN and VDE.