Semiconductor devices; discrete devices; part 7: bipolar transistors; section two: blank detail specification for case-rated bipolar transistors for low-frequency amplification
German title
Halbleiterbauelemente; Einzel-Halbleiterbauelemente; Teil 7: Bipolare Transistoren; Hauptabschnitt 2: Vordruck für Bauartspezifikationen für gehäusebezogene bipolare Transistoren für NF-Verstärkungen
Publication date
1989-01
Accessibility
Original language
English,
French
Pages
27
Publication date
1989-01
Original language
English,
French
Pages
27
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