Semiconductor devices - Discret devices. Part 8: Field-effect transistors. Blank detail specification for single-gate field-effect transistors, up to 5 W and 1 GHz.
German title
Halbleiterbauelemente - Diskrete Bauelemente und integrierte Schaltkreise; Teil 8: Feldeffekttransistoren. Bauartspezifikation für Einzeltorfeldeffekttransistoren bis zu 5 W und 1GHz
Publication date
1987
Accessibility
Original language
English,
French
Publication date
1987
Original language
English,
French
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