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IEC 60747-9:2007-09
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
- German title
- Halbleiterbauelemente - Einzel-Halbleiterbauelemente - Teil 9: Bipolartransistoren mit isoliertem Gate (IGBTs)
- Publication date
- 2007-09
- Original language
- English, French
- Pages
- 117
- Publication date
- 2007-09
- Original language
- English, French
- Pages
- 117
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