Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics
German title
Prüfverfahren zur Aufteilung einer durch Oxidhaftlöcher und Schnittstellenzustände bedingten gesamtdosisinduzierten MOSFET-Schwellenspannungsverschiebung in Komponenten mit Hilfe der Teilschwellenwerttechnik
Publication date
2011
reapproved: 2018
Original language
English
Pages
7
Publication date
2011
reapproved: 2018
Original language
English
Pages
7
DOI
https://dx.doi.org/10.1520/F0996-11R18
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