Semiconductor devices - Field-effect transistors; Section one: Blank detail specification for single-gate field-effect tramsistors up to 5 W and 1 GHz; Identical with IEC 60747-8-1:1987
German title
Halbleiterbauelemente - Feldeffekttransistoren; Hauptabschnitt 1: Vordruck für Bauartspezifikationen für Feldeffekttransistoren mit einer Gate-Elektrode bis 5 W und 1 GHz; Identisch mit IEC 60747-8-1:1987
Publication date
1991-07
Original language
German
Pages
17
Publication date
1991-07
Original language
German
Pages
17
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